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The temperature dependence of both components of the resistivity tensor$\varrho_{xx}(T)$ and $\varrho_{xy}(T)$ has been studied at T $\geq$ 4.2 Kwithin IQHE plateaux around filling factors \nu=2 and \nu=4 of medium--mobility GaAs/AlGaAs heterostructures. In the middle of the mobility gapstandard activated conductivity has been found with activation energies $\Delta$ scaling well with $\hbar\omega_{c} / 2$ . At filling factors slightly below$\nu$=2 another contribution adds to the activated conductivity at T $\leq$ 12K. This additional contribution can be further enhanced at higher mesuring d.c.currents.We suggest, that it arises due to enhanced electric field assistedtunneling across potential barriers separating localized states within the bulkof the sample.This effect contributes to the backscattering across the sampleleading to an enhanced longitudinal conductivity. The additional contributionto $\sigma_{xx}(T)$ can be reasonably well fitted to the formula for thevariable range hopping in strong magnetic fields indicating that the hoppingcan persist even at temperatures well above 4.2K.Comment: 15 pages, LaTeX, 9 postscript figures; accepted for publication in  Semiconductor Science & Technolog

Electron conduction within Landau-level tails of medium-mobility GaAs/AlGaAs heterostructures