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Ultra-thin topological insulators provide a platform of realizing many exoticphenomena such a Quantum spin Hall effect, Quantum anomalous Hall effect, etc.These effects or states are characterized by quantized transport behavior ofedge states. Experimentally, although these states have been realized invarious systems, the temperature for the edge states to be the dominatingchannel in transport is extremely low, contrary to the fact that the bulk gapis usually in the order of a few tens of milli-electron volts. There must beother in-gap conduction channels that won't freeze out till a much lowtemperature. Here we grow ultra-thin topological insulator Bi2Te3 and Sb2Te3films by molecular beam epitaxy and investigate the structures of domainboundaries in these films. By scanning tunneling microscopy and spectroscopy wefind that the domain boundaries with large rotation angles have pronouncedin-gap bound states, through which one dimensional conduction channels aresuggested to form as visualized by spatially resolved spectroscopy. Our workindicates the critical role played by domain boundaries in degrading thetransport properties.

Visualizing the in-gap states in domain boundaries of ultra-thin topological insulator films