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We report transport measurements on Josephson junctions consisting of Bi2Te3topological insulator (TI) thin films contacted by superconducting Nbelectrodes. For a device with junction length L = 134 nm, the criticalsupercurrent Ic can be modulated by an electrical gate which tunes the carriertype and density of the TI film. Ic can reach a minimum when the TI is near thecharge neutrality regime with the Fermi energy lying close to the Dirac pointof the surface state. In the p-type regime the Josephson current can be welldescribed by a short ballistic junction model. In the n-type regime thejunction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusivebulk modes emerge and contribute a larger Ic than the ballistic model. Weattribute the lack of diffusive bulk modes in the p-type regime to theformation of p-n junctions. Our work provides new clues for search of Majoranazero mode in TI-based superconducting devices.

Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films