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The electronic topology is generally related to the Berry curvature, whichcan induce the anomalous Hall effect in time-reversal symmetry breakingsystems. Intrinsic monolayer transition metal dichalcogenides possesses twononequivalent K and K' valleys, having Berry curvatures with opposite signs,and thus vanishing anomalous Hall effect in this system. Here we report theexperimental realization of asymmetrical distribution of Berry curvature in asingle valley in monolayer WSe2 through applying uniaxial strain to break C3vsymmetry. As a result, although the Berry curvature itself is still opposite inK and K' valleys, the two valleys would contribute equally to nonzero Berrycurvature dipole. Upon applying electric field, the emergent Berry curvaturedipole would lead to an out-of-plane orbital magnetization, which furtherinduces an anomalous Hall effect with a linear response to E^2, known asnonlinear Hall effect. We show the strain modulated transport properties ofnonlinear Hall effect in monolayer WSe2 with moderate hole-doping by gating.The second-harmonic Hall signals show quadratic dependence on electric field,and the corresponding orbital magnetization per current density can reach aslarge as 60. In contrast to the conventional Rashba-Edelstein effect within-plane spin polarization, such current-induced orbital magnetization is alongthe out-of-plane direction, thus promising for high-efficient electricalswitching of perpendicular magnetization.

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer