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High temperature superconductivity in cuprates is realized by doping the Mottinsulator with charge carriers. A central issue is how such an insulating statecan evolve into a conducting or superconducting state when charge carriers areintroduced. Here, by in situ vacuum annealing and Rb deposition on theBi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping levelcontinuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the nearzero doping parent Mott insulator, angle-resolved photoemission spectroscopymeasurements are carried out to observe the detailed electronic structureevolution in lightly hole-doped region for the first time. Our results indicatethat the chemical potential lies at about 1 eV above the charge transfer bandfor the parent state at zero doping which is quite close to the upper Hubbardband. With increasing hole doping, the chemical potential moves continuouslytowards the charge transfer band and the band structure evolution exhibits arigid band shift-like behavior. When the chemical potential approaches thecharge transfer band at a doping level of -0.05, the nodal spectral weight nearthe Fermi level increases, followed by the emergence of the coherentquasiparticle peak and the insulator-superconductor transition. Ourobservations provide key insights in understanding the insulator-superconductortransition in doping the parent cuprate compound and for establishing relatedtheories.

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+delta