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Two-dimensional (2D) ferromagnetic materials have been exhibiting promisingpotential in applications, such as spintronics devices. To grow epitaxialmagnetic films on silicon substrate, in the single-layer limit, is practicallyimportant but challenging. In this study, we realized the epitaxial growth ofMnSn monolayer on Si(111) substrate, with an atomically thinSn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$- buffer layer, and controlled the MnSnthickness with atomic-layer precision. We discovered the ferromagnetism in MnSnmonolayer with the Curie temperature (Tc) of ~54 K. As the MnSn film is grownto 4 monolayers, Tc increases accordingly to ~235 K. The lattice of theepitaxial MnSn monolayer as well as the Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$is perfectly compatible with silicon, and thus an sharp interface is formedbetween MnSn, Sn and Si. This system provides a new platform for exploring the2D ferromagnetism, integrating magnetic monolayers into silicon-basedtechnology, and engineering the spintronics heterostructures.

Ferromagnetic MnSn monolayer epitaxially grown on silicon substrate