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Topological Weyl semimetal WTe2 with large-scale film form has a promisingprospect for new-generation spintronic devices. However, it remains a hard taskto suppress the defect states in large-scale WTe2 films due to the chemicalnature. Here, we significantly improve the crystalline quality and remove theTe vacancies in WTe2 films by post annealing. We observe the distinctShubnikov-de Haas quantum oscillations in WTe2 films. The nontrivial Berryphase can be revealed by Landau fan diagram analysis. The Hall mobility of WTe2films can reach 1245 cm2V-1s-1 and 1423 cm2V-1s-1 for holes and electrons withthe carrier density of 5 * 10^19 cm^-3 and 2 * 10^19 cm^-3, respectively. Ourwork provides a feasible route to obtain high-quality Weyl semimetal films forthe future topological quantum device applications.

Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe2 Films