English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics foroptoelectronic and photoelectrochemical applications, e.g. photodetection andphotocatalytic water splitting. However, both of them have poor absorption ofvisible light due to wide band gaps. 2D InSe has high electron mobility but lowhole mobility, while 2D WS$_2$ is on the opposite. Here, we design a 2Dheterostructure composed of their monolayers and study its optoelectronicproperties by first-principles calculations. Our results show that theheterostructure has a direct band gap of 2.19 eV, which is much smaller thanthose of the monolayers mainly due to a type-II band alignment: the valenceband maximum and the conduction band minimum of monolayer InSe are lower thanthose of monolayer WS$_2$, respectively. The visible-light absorption isenhanced considerably, e.g. about fivefold (threefold) increase at thewavelength of 490 nm in comparison to monolayer InSe (WS$_2$). The type-II bandalignment also facilitates the spatial separation of photogeneratedelectron-hole pairs, i.e., electrons (holes) reside preferably in the InSe(WS$_2$) layer. The two layers complement each other in carrier mobilities ofthe heterostructure: the photogenerated electrons and holes inherit the largemobilities from the InSe and WS$_2$ monolayers, respectively.

Two-dimensional InSe/WS$_2$ heterostructure with enhanced optoelectronic performance in the visible region