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By means of oxide molecular beam epitaxy with shutter-growth mode, we havefabricated a series of electron-doped (Sr1-xLax)2IrO4(001)(x = 0, 0.05, 0.1 and0.15) single crystalline thin films and then investigated the doping dependenceof electronic structure utilizing in-situ angle-resolved photoemissionspectroscopy. We find that with increasing doping proportion, the Fermi levelsof samples progressively shift upward. Prominently, an extra electron pocketcrossing the Fermi level around the M point has been evidently observed in 15 %nominal doping sample. Moreover, bulk-sensitive transport measurements confirmthat doping effectively suppresses the insulating state with respect to theas-grown Sr2IrO4, though doped samples still remain insulating at lowtemperatures due to the localization effect possibly stemming from disordersincluding oxygen deficiencies. Our work provides another feasible doping methodto tune electronic structure of Sr2IrO4.

Tuning the electronic structure of Sr2IrO4 thin films by bulk electronic doping using molecular beam epitaxy