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The half-integer quantum Hall effect in epitaxial graphene is compared withhigh precision to the well known integer effect in a GaAs/AlGaAsheterostructure. We find no difference between the quantised resistance valueswithin the relative standard uncertainty of our measurement of $8.7\times10^{-11}$. The result places new tighter limits on any possible correctionterms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates thatepitaxial graphene samples are suitable for application as electricalresistance standards of the highest metrological quality. We discuss thecharacterisation of the graphene sample used in this experiment and present thedetails of the cryogenic current comparator bridge and associated uncertaintybudget.

Precision comparison of the quantum Hall effect in graphene and gallium arsenide