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We theoretically demonstrate a simple way to significantly enhance thespin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in aferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying acircularly polarized light in off-resonant regime to the second ferromagnetic(FM) region. We show that the fully spin-polarized current can be realized incertain ranges of light intensity. Increasing the incident energy in thepresence of light will induce a transition of perfect spin polarization frompositive to negative or vice versa depending on magnetic configuration(parallel or anti-parallel) of FNF junction. Additionally, under a circularlypolarized light, valley polarization is very sensitive to electric field andthe perfect valley polarization can be achieved even when staggered electricfield is much smaller than exchange field. The most important result we wouldlike to emphasize in this paper is that the perfect spin polarization and 100%TMR induced by a circularly polarized light are completely independent ofbarrier height in normal region. Furthermore, the sign reversal of TMR can beobserved when the polarized direction of light is changed. A condition forobserving the 100% TMR is also reported. Our results are expected to beinformative for real applications of FNF silicene junction, especially inspintronics.

Photoenhanced spin/valley polarization and tunneling magnetoresistance in ferromagnetic-normal-ferromagnetic silicene junction