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Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laserdeposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growthwas varied to demonstrate the gradual transformation between NbO2 and Nb2O5phases, which was verified using x-ray diffraction, x-ray photoelectronspectroscopy, and optical absorption measurements. Electric resistancethreshold switching characteristics were studied in a lateral geometry usinginterdigitated Pt top electrodes in order to preserve the epitaxial crystallinequality of the films. Volatile and reversible transitions between high and lowresistance states were observed in epitaxial NbO2 films, while irreversibletransitions were found in case of Nb2O5 phase. Electric field pulsed currentmeasurements confirmed thermally-induced threshold switching.

Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices