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The new generation of lithography tools use high energy EUV radiation whichionizes the present background gas due to photoionization. To predict andunderstand the long term impact on the highly delicate mirrors It is essentialto characterize these kinds of EUV-induced plasmas. We measured the electrondensity evolution in argon gas during and just after irradiation by a shortpulse of EUV light at 13.5 nm by applying microwave cavity resonancespectroscopy. Dependencies on EUV pulse energy and gas pressure have beenexplored over a range relevant for industrial applications.  Our experimental results show that the maximum reached electron densitydepends linearly on pulse energy. A quadratic dependence - caused byphotoionization and subsequent electron impact ionization by free electrons -is found from experiments where the gas pressure is varied. This isdemonstrated by our theoretical estimates presented in this manuscript as well.

Exploring the electron density in plasmas induced by extreme ultraviolet radiation in argon