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Cleaning of contamination of optical surfaces by amorphous carbon (a-C) ishighly relevant for extreme ultraviolet (EUV) lithography. We have studied themechanisms for a-C removal from a Si surface. By comparing a-C removal in asurface wave discharge (SWD) plasma and an EUV-induced plasma, the cleaningmechanisms for hydrogen and helium gas environments were determined. The C-atomremoval per incident ion was estimated for different sample bias voltages andion fluxes. It was found that H2 plasmas generally had higher cleaning ratesthan He plasmas: up to seven times higher for more negatively biased samples inEUV induced plasma. Moreover, for H2, EUV induced plasma was found to be 2-3times more efficient at removing carbon than the SWD plasma. It was observedcarbon removal during exposure to He is due to physical sputtering by He+ ions.In H2, on the other hand, the increase in carbon removal rates is due tochemical sputtering. This is a new C cleaning mechanism for EUV-induced plasma,which we call "EUV-reactive ion sputtering".

Comparison of H2 and He carbon cleaning mechanisms in extreme ultraviolet induced and surface wave discharge plasmas