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We simulated and experimentally investigated the sputter yield of ZnO andGaAs nanowires, which were implanted with energetic Mn ions at roomtemperature. The resulting thinning of the nanowires and the dopantconcentration with increasing Mn ion fluency were measured by accurate scanningelectron microscopy (SEM) and nano-X-Ray Fluorescence (nanoXRF) quantification,respectively. We observed a clear enhanced sputter yield for the irradiatednanowires compared to bulk, which is also corroborated by iradina simulations.These show a maximum if the ion range matches the nanowire diameter. As aconsequence of the erosion thinning of the nanowire, the incorporation of theMn dopants is also enhanced and increases non-linearly with increasing ionfluency.

Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires