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Electric-field induced magnetization switching in multiferroicmagnetoelectric devices is promising for beyond Moore's law computing. We showhere that interface-coupled multiferroic heterostructures, i.e., aferroelectric layer coupled with a ferromagnetic layer, are particularlysuitable for highly-dense, non-volatile, and ultra-low-energy computing. Bysolving stochastic Landau-Lifshitz-Gilbert equation of magnetization dynamicsin the presence of room-temperature thermal fluctuations, we demonstrate thaterror-resilient switching of magnetization is possible in sub-nanosecond delaywhile expending a minuscule amount of energy of $\sim$1 attojoule. Such devicescan be operated by drawing energy from the environment without the need for anexternal battery.

journal of physics. d, applied physics

Electric field-induced magnetization switching in interface-coupled  multiferroic heterostructures: A highly-dense, non-volatile, and  ultra-low-energy computing paradigm