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We study step flow growth of epitaxial graphene on 6H-SiC using a onedimensional kinetic Monte Carlo model. The model parameters are effectiveenergy barriers for the nucleation and propagation of graphene at the SiCsteps. When the model is applied to graphene growth on vicinal surfaces, astrip width distribution is used to characterize the surface morphology.Additional kinetic processes are included to study graphene growth on SiCnano-facets. Our main result is that the original nano-facet is fractured intoseveral nano-facets during graphene growth. This phenomenon is characterized bythe angle at which the fractured nano-facet is oriented with respect to thebasal plane. The distribution of this angle across the surface is found to berelated to the strip width distribution for vicinal surfaces. As the terracepropagation barrier decreases, the fracture angle distribution changescontinously from two-sided Gaussian to one-sided power-law. Using thisdistribution, it will be possible to extract energy barriers from experimentsand interpret the growth morphology quantitatively.

Model and Simulations of the Epitaxial Growth of Graphene on Non-Planar 6H-SiC Surfaces