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The morphology of graphene on SiC {0001} surfaces formed in variousenvironments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4Torr of disilane is studied by atomic force microscopy, low-energy electronmicroscopy, and Raman spectroscopy. The graphene is formed by heating thesurface to 1100 - 1600 C, which causes preferential sublimation of the Siatoms. The argon atmosphere or the background of disilane decreases thesublimation rate so that a higher graphitization temperature is required, thusimproving the morphology of the films. For the (0001) surface, large areas ofmonolayer-thick graphene are formed in this way, with the size of these areasdepending on the miscut of the sample. Results on the (000-1) surface are morecomplex. This surface graphitizes at a lower temperature than for the (0001)surface and consequently the growth is more three-dimensional. In an atmosphereof argon the morphology becomes even worse, with the surface displayingmarkedly inhomogeneous nucleation, an effect attributed to unintentionaloxidation of the surface during graphitization. Use of a disilane environmentfor the (000-1) surface is found to produce improved morphology, withrelatively large areas of monolayer-thick graphene.

Graphene formed on SiC under various environments: Comparison of Si-face and C-face