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The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organicthin film field effect transistors (FET) is evaluated. Field-effect transistorswith sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconductinglayer were fabricated. The device preparation was performed in-situ in an ultrahigh vacuum chamber system. The dielectric in the transistors had apermittivity of up to 200 which led to low driving voltages of 3 V. The fieldeffect transistors were p-type and reached mobilities of about $\mu = 1.5\times10^{-3}$ cm$^2$/Vs and an on/off ratio of $10^3$. These properties are comparedto devices based on other dielectric materials.

High-$\kappa$ field-effect transistor with copper-phthalocyanine