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Luminescence characteristics of single crystals (SC), single crystallinefilms (SCF), powders and ceramics of YAlO_3 and YAlO_3:Ce have been studied at4.2-300 K under photoexcitation in the 4-20 eV energy range and X-rayexcitation. The origin and structure of defects responsible for variousexciton-related emission and excitation bands have been identified. The ~5.6 eVemission of YAlO_3 SCF is ascribed to the self-trapped excitons. In YAlO_3 SC,the dominating 5.63 eV and 4.12 eV emissions are ascribed to the excitonslocalized at the isolated antisite defect Y^{3+}_Al and at the Y^{3+}_{Al}defect associated with the nearest-neighbouring oxygen vacancy, respectively.Thermally stimulated release of electrons, trapped at these defects, takesplace at 200 K and 280 K, respectively. The formation energies of variousY^{3+}_{Al}-related defects are calculated. The presence of Y_{Al}antisite-related defects is confirmed by NMR measurements. The influence ofvarious intrinsic and impurity defects on the luminescence characteristics ofCe^{3+} centers is clarified.

Time-resolved spectroscopy of exciton states in single crystals, single crystalline films and powders of YAlO_3 and YAlO_3:Ce