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Room-temperature 1535-nm-band photoluminescence in ~126 nm silica films (6at. % doping), produced by spin-coating an Er2O3 and tetraethylorthosilicatesol-gel formulation on silicon substrates, was studied as a function of vacuumfurnace annealing (500 to 1050 degrees C). Emission is strongly enhanced forannealing near 850 degrees C, which is shown by modeling the temperaturedependence as arising from thermally-activated removal of hydroxyl ions.Suitability of such a process for silicon-based applications is discussed.

Analytical Study of Thermal Annealing Behaviour of Erbium Emission in Er2O3-Sol-Gel Silica Films