English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Real time electron microscopy observation on morphological changes in goldnano structures deposited on Si (100) surfaces as a function of annealingtemperatures has been reported. Two types of interfaces with the substratesilicon were used prior to gold thin film deposition: (i) without native oxideand on ultra-clean reconstructed Si surfaces and (ii) with native oxide coveredSi surfaces. For a \approx 2.0 nm thick Au films deposited on reconstructedSi(100) surfaces using molecular beam epitaxy method under ultra high vacuumconditions, aligned four-fold symmetric nanogold silicide structures formed atrelatively lower temperatures (compared with the one with native oxide at theinterface). For this system, 82% of the nanostructures were found to be nanorectangles like structures with an average length \approx 27 nm and aspectratio of 1.13 at \approx 700{\deg}C. For \approx 5.0 nm thick Au filmsdeposited on Si (100) surface with native oxide at the interface, formation ofrectangular structures were observed at higher temperatures (\approx 850{\deg}C). At these high temperatures, desorption of the gold silicide followed thesymmetry of the substrate. Native oxide at the interface was found to act likea barrier for the inter-diffusion phenomena. Structural characterization wascarried out using advanced electron microscopy methods.

Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface