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Bulk dc resistivity and dielectric constant measurements with temperature andfrequency have been performed in LaMn_{1-x}Fe_xO_3 (0 <= x <= 1.0) as a resultof Fe substitution both for the as-synthesized and oxygen annealed samples.Temperature dependence of real part of dielectric constant at differentfrequencies show a frequency and temperature independent value (epsilon_s) atlow temperature for x >= 0.15 where epsilon_0 rises with x reaching a maximumat x = 0.5 and then it decreases sharply at x = 0.70 showing a furtherincreasing trend with the further increase in x. The sharp drop of epsilon_s atx = 0.70 is correlated with the structural change from rhombohedral toorthorhombic structure. A considerable increase of epsilon_s ~ 43% is observedfor an increase of x from 0.15 to 0.50. Furthermore, epsilon_s is increasedconsiderably (up to ~ 17% at x = 0.5) due to the oxygen annealing for x <=0.50. The low temperature resistivities satisfying Variable Range Hopping modelare found to be related with the increase of epsilon_s with x for x <= 0.50.The analysis of the complex impedance and modulus planes at low temperatureindicates the electrical inhomogeneities in the grain interior of thecompounds.

Intragrain electrical inhomogenities and compositional variation of static dielectric constant in LaMn_{1-x}Fe_xO_3