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The damage growth and surface modifications in Si(100), induced by 25 keVSi$_5^-$ cluster ions, as a function of fluence, $\phi$, has been studied usingatomic force microscopy (AFM) and channeling Rutherford backscatteringspectrometry (CRBS). CRBS results indicate a nonlinear growth in damage fromwhich it has been possible to get a threshold fluence, $\phi_0$, foramorphization as $2.5\times 10^{13}$ ions-cm$^{-2}$. For $\phi$ below $\phi_0$,a growth in damage as well as surface roughness has been observed. At a $\phi$of $1\times 10^{14}$ ions-cm$^{-2}$, damage saturation coupled with a muchreduced surface roughness has been found. In this case a power spectrumanalysis of AFM data showed a significant drop, in spectral density, ascompared to the same obtained for a fluence, $\phi < \phi_0$. This drop,together with damage saturation, can be correlated with a transition to astress relaxed amorphous phase. Irradiation with similar mass Cs$^-$ ions, atthe same energy and fluence, has been found to result in a reduced accumulationof defects in the near surface region leading to reduced surface features.

Study of low energy Si$_5^-$ and Cs$^-$ implantation induced amorphization effects in Si(100)