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We have studied a 50/50\AA superlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$Ascomposition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailoredto avoid the formation of Tamm states, and photoluminescence due to interbandtransitions from extended superlattice states was detected. By studying theeffects of a quantizing magnetic field on the superlattice photoluminescence,the miniband energy width, the reduced effective mass of the electron-holepair, and the band gap renormalization could be deduced.Comment: minor typing errors (minus sign in eq. (5)

Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields