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A new type of field emission display(FED) based on an edge-enhance electronemission from metal-insulator-semiconductor (MIS) thin film structure isproposed. The electrons produced by an avalanche breakdown in the semiconductornear the edge of a top metal electrode are initially injected to the thin filmof an insulator with a negative electron affinity (NEA), and then are injectedinto vacuum in proximity to the top electrode edge. The condition for thedeep-depletition breakdown near the edge of the top metal electrode isanalytically found in terms of ratio of the insulator thickness to the maximum(breakdown) width of the semiconductor depletition region: this ratio should beless than 2/(3 \pi - 2) = 0.27. The influence of a neighboring metal electrodeand an electrode thickness on this condition are analyzed. Different practicalschemes of the proposed display with a special reference to M/CaF_2/Sistructure are considered.Comment: 11 pages, 5 figure

A proposal for a new type of thin-film field-emission display by edge breakdown of MIS structure