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Experiments giving impurity-induced lattice distortion can measure quite distinct quantities. In particular EXAFS (extended X-ray fine structure) measures nearest-neighbour distances, whereas both volume changes and recent spectroscopic data measure long-range displacements. The relationship between the two depends strongly on the inter-atomic potential. The authors analyse this for impurities in silicon by adopting a variety of current potentials. There is a significant contradiction between the EXAFS results and the other experiments for all of the inter-atomic potentials. This problem may be associated with the high oxygen concentrations of Czochralski crystals used in the EXAFS study.

Local distortions and volume changes in semiconductors: donors in silicon