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Diamond single crystals have garnered significant attention due to their wide-ranging applications, encompassing not only semiconducting films but also potential quantum sensing materials. The hot-filament activated chemical vapor deposition (HFCVD) technique has been extensively employed to produce polycrystalline diamond films, hard coatings, boron-doped diamond electrodes, and thermal management applications, primarily due to its notable advantages in scalability (&gt;12 inches). However, the growth of single crystals presents certain challenges, such as wire contaminations originating from heated filament materials, which are particularly concerning for electronic applications. Furthermore, low-rate growth is unfavorable for industrial implementation. Nonetheless, recent discoveries have demonstrated that intentionally-doped metal impurities can enhance the crystallinity of diamonds, resulting in highly uniform Schottky barrier diodes with low leakage currents. Moreover, by elevating the filament temperature to 3000 °C, growth rates exceeding 10 µm/h have been successfully achieved. This study provides a concise overview of the recent advancements in hot-filament CVD growth, focusing on growth, doping, metal incorporation effects, and device performance.

Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls