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Poly(ether-ketone) (PEK)/silicon nitride (Si 3 N 4 ) nanocomposites were fabricated by cold compaction followed by sintering at 260°C. Vickers microhardness and storage modulus of the nanocomposites increased, while their % crystallinity and thermal stability decreased without affecting the glass transition temperature. The dielectric constant of the nanocomposites increased to 5.03 with a dissipation factor (at 1 kHz) below 0.007. In brief, the PEK/Si 3 N 4  nanocomposites might be useful as potential candidates as alternative material for the printed circuit board application.

Poly(ether-ketone) (PEK)/ceramic nanocomposites as alternate materials for printed circuit board application