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To prominently suppress the dielectric loss of flaky-Cu ( f -Cu)/poly(vinylidene fluoride) (PVDF) while still holding a high permittivity ( k ), silica (SiO 2 ) encapsulated  f -Cu core-shell structured particles were prepared through a sol-gel method, and the  f -Cu@SiO 2  were incorporated into PVDF to expect a high-k but low loss composites. The dielectric properties and thermal conductivity (TC) of the composite were explored in terms of the SiO 2  shell. The results manifest that the  f -Cu@SiO 2  remarkably decreases the dielectric loss and conductivity of the composites thanks to the presence of SiO 2  interlayer preventing the pristine  f -Cu from direct contact. The thickness of SiO 2  interlayer should be finely tuned to exert the optimal influence on dielectric properties and TC of composites. Furthermore, the dielectric properties and TC of the composites were thoroughly investigated as a function of the weight ratio of SiO 2  to  f -Cu, catalyst loading and reacting temperature. When the weight ratio, catalyst loading and reacting temperature values are set as 1:(0.1–0.15), 1.0 vol.%, and 50°C, respectively, the best dielectric properties and enhanced TC can be reached. The prepared Cu@SiO 2 /PVDF composites with a high-k but low loss, as well as enhanced TC, show more promising applications for microelectronic and electrical industry.

Tailoring the dielectric properties and thermal conductivity of f -Cu/PVDF composites with SiO 2 shell as an interfacial layer