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Ferroelectric thin films of lead titanate (PbTiO 3 ) have been prepared on SiO 2 /Si(100) and LaNiO 3 (110)/SiO 2 /Si(100) substrates by a sol-gel spin coating method, using lead acetate trihydrate, and titanium isopropoxide as precursors along with 2-methoxyethanol as a solvent and acetic acid as catalyst. X-Ray Diffraction patterns show the formation of the perovskites structure of PbTiO 3  thin films deposited on SiO 2 /Si substrates at 650°C. A SEM micrograph of the film cross-section is used to measure the thickness, which gave a value of 0.65 μm. Analysis of its ferroelectric hysteresis measurements gave values of remanent polarisation of P r  = 18.37 μC/cm 2  and a coercive field of E c  = 121.53 kV/cm which are essential for non-volatile memories application. The current-voltage characteristic was found to be space charge conduction in the high voltage region and its piezoelectric coefficient d 33 , as measured by a Laser Scanning Doppler vibrometry, showed small linear decreases from 75 pm/V at 45 kV/cm to 67 pm/V at the highest applied field (330 kV/cm).

Ferroelectric properties and structural characterisation of lead titanate thin films prepared by polymeric precursor method