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This paper studies optical properties of Nitrogen-doped a-SiC amorphous, commonly called, silicon carbonitride (SiCN) thin films deposited on polished and textured silicon wafers by reactive RF magnetron sputtering technique. Different samples were made at room temperature by sputtering a silicon carbide (SiC) target in argon and nitrogen mixture environment. The FTIR measurement confirms the presence of Si-C and Si-N bonds. The peaks corresponding to Si-C are 611, 653, 669, 740, 834 cm −1  and the peaks corresponding to Si-N are in the range ~870–950 cm −1 . The optical properties were achieved from reflectivity spectra by UV-visible spectroscopy. The refractive index (n &lt; 2.5) and the optical gap (E g &gt;2.2 eV) of the deposited films depended on the used argon and nitrogen flows. The electrochemical properties of amorphous p-type a-SiC/N thin films on p-Si substrate were investigated as electrodes in H 2 SO 4  aqueous solutions in the dark and under the white light illumination. The SiCN films show a good suitability for the antireflective coating application and can be applied to fabricate high efficient and stable SiCN catalysed n + p-Si photocathode with pyramid surface for PEC CO 2  conversion.

Optical and photoelectrochemical properties of nitrogen-doped a-SiC thin films deposited by reactive sputtering method at room temperature