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This paper presents 2D-Sentaurus TCAD tool results of a Non-aligned Double Gate Junction N-Channel Field Effect Transistor (NADGNFET) device; the response analysis of device to gate oxide dielectric materials, i.e. silicon dioxide (SiO 2 ) and hafnium dioxide (HfO 2 ), is also presented. The NADGNFET in 90 nm device length is the proposal of this work to improve the second-order effects as well transistor non-linear performance at radio frequency (RF). A non-aligned device in this work consists of two gates extending to the source and drain region with 44.44% channel overlap in total device length. As compared to a full overlap device, the present device has shown better results in Analog Figure of Merit (FOM) and RF parameters like: I ON  current, I ON /I OFF  ratio, DIBL (Drain Induced Barrier lowering), SS (Subthreshold Swing), Intrinsic gain (A VO ), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), Cut-off frequency (f T ), Intercepted Input Power-3 (IIP3) and Intermodulation Distortion power-3 (IMD3). The use of dielectric material with high dielectric constant (HfO 2 , k = 24) in gate oxide reduces DIBL by 50%, increases the I ON /I OFF  ratio by 59.1%, increases the Intrinsic gain by 50% compared to low-k dielectric constant (SiO 2 , k = 3.9). However, results also shows that high-frequency parameters’ results were better with low-k dielectric constant. This gives a trade-off in device application.

TCAD performance analysis of a symmetrical double gate non-aligned junction FET device with high and low dielectric gate oxide in sub-100 nm regime