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A voltage-mode sense amplifier circuit designed for resistive random-access memory (ReRAM)-based memory arrays is proposed. The sense amplifier is designed comprising of an inverting buffer so that it can operate at a very low voltage (150 mV), which is the typical READ output voltages of a ReRAM cell while the proposed differential comparator design utilises a reduced number of transistors (20%) compared with conventional design to determine the logic states of the ReRAM cell. A simulation with a 2 × 2 memory crossbar is performed and compared with existing voltage-mode and current-mode sense amplifiers and the proposed circuit shows better READ time (32% and 85%) and energy performance (54% and 59%) than existing methods.

Sense amplifier for ReRAM-based crossbar memory systems