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This paper proposes an enhanced asymmetric dual directional silicon controlled rectifier (EADDSCR) for the applications of bidirectional electrostatic discharge (ESD) protection. The ADDSCR and EADDSCR were prepared in a 0.18 µm Bipolar CMOS DMOS (BCD) process and measured with the transmission line pulsing tester. By adding N+ injection regions in the cathode and anode, a new vertical SCR path is formed in EADDSCR, so that the failure current of EADDSCR can reach twice as much as that of ADDSCR with only a small increase in the area of EADDSCR. Moreover, the FoM of EADDSCR can be increased to more than 81.19 µA/µm. Finally, the improved device possesses a smaller on resistance and is more suitable for high-voltage circuit applications.

Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection