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In the present work, the hyperbolic two-temperature model with one thermal relaxation time is utilized to study the photo-thermal interactions in semiconductor media. The variations of the carrier density, the thermodynamic, the conductive temperatures, the stress and the displacement in a semi-infinite semiconductor material have been estimated. The material is considered to be an isotropic, homogeneous semiconductor medium. By using Laplace transforms with the eigenvalues methodology, the exact solutions of all physical quantities are obtained. Finally, the numerical results are presented graphically to show the difference between the generalized classical two-temperature model, the generalized hyperbolic two-temperature model, the generalized thermo-elastic model and the one temperature model.

Photo-thermo-elastic interaction in a semiconductor material upon hyperbolic two-temperature and thermal relaxation times