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A spark plasma sintering technology has already become rather common for the fabrication of GexSi1-x nanostructured thermoelectric solid solutions. Such trend is related with a number of opportunities and technological tools that enable precise properties manipulation. The present paper is devoted to discussing the modulation of GexSi1-x spark plasma sintering technique that consists in the use of silicon phosphide as a source of n-type doping within the process of sintering. The composition of the sintered powder is investigated. The synthesis of a solid solution was carried out in the process of sintering. The SiP is a chemically stable non-toxic compound that can replace toxic phosphorus in thermoelectric technology thus reducing the safety requirements of the corresponding technology process. The paper investigates the effect of SiP concentration on thermoelectric characteristics. The impurity distribution is analyzed, and the association of phosphorus atoms into clusters at a very high doping level is shown. The distribution of impurity elements was controlled by EMF analysis in a scanning electron microscope. It was shown that sintering of Ge-Si-SiP powder mixture allowed obtaining the phosphorus doped GexSi1-x material with high electron concentration that demonstrate high level of thermoelectric properties. The obtained thermoelectric characteristics are compared with the world's best nanostructured materials

High-Efficiency Spark Plasma Sintered Ge 0.3 Si 0.7 :P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping