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The performance up-gradation that enhances the power output of the solar photovoltaic (SPV) panel along with life term is the latest demand in any standalone applications. The current ripple rejected to the SPV panel has both electrical and thermal effects. Lower the ripple, lower will be the power loss and the rise in temperature. Here, a method for an additional ripple current reduction at the source is demonstrated with a 300 W, 500 kHz, gallium nitride device-based panel integrated three-phase synchronous boost converter. A simple procedure of listing the switching states at each ON and OFF of polyphase periods in the analytical method for ripple estimation is proposed. A novel input current ripple reduction method, in addition to that of conventional operations, which leads the converter operations with minimum ripple rejection implemented. The factors that enhance the life of the SPV system, accomplishment of a typical improvement of 7% with a reduction of 3.5 deg. C rise in temperature, for all electrical reflections of the converter, is evaluated. Additionally, the electrical performance of 96.4% efficiency and 3.90 × 10 6  W/m 3  power density was achieved. An SPV module integrated converter for a LED street-lighting application, implemented with the proposed method is detailed.

A low ripple current rejection method to improve the lifetime of solar photo voltaic integrated GaN converter system