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This article demonstrates a highly efficient FeS 2 -based n-ZnSe/p-FeS 2 /p + -Al x Ga 1-x Sb dual-heterojunction thin film solar cell using SCAPS-1D simulator. The study has been carried out taking the physical parameters from the literature. The influence of thickness, doping, and defect concentration of ZnSe, FeS 2 , and Al x Ga 1-x Sb layers on the photovoltaic performance of the solar cell has been investigated in details. The power conversion efficiency (PCE) of the n-ZnSe/p-FeS 2  single-heterojunction solar cell is ~23.22% with J SC  = 47.52 mA/cm 2 , V OC  = 0.59 V, and FF = 82.62%, respectively. The PCE of the solar cell further increases to ~36.75% with J SC  = 48.13 mA/cm 2 , V OC  = 0.94 V, and FF = 80.75%, respectively with the insertion of Al x Ga 1-x Sb back surface field (BSF) layer. This increase in PCE is mainly due to the enhancement of V OC  which is resulted from the suitable band alignment of the dual-heterojunction devices. These results indicate that FeS 2 -based dual-heterojunction thin film solar cell with ZnSe and Al x Ga 1-x Sb window and BSF layers, respectively, is a potential candidate to fabricate high efficiency thin film solar cell for harvesting solar energy in the future.

Design of a highly efficient FeS 2 -based dual-heterojunction thin film solar cell