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The article is devoted to characteristics of charge carrier transfer in silicon microcrystals modified with a transition metal admixture with an unfilled 3d +  local magnetic moment envelope and doped with boron to concentrations that correspond to the metal-dielectric transition. At cryogenic temperatures, the magnetoresistance of microcrystals was examined under the influence of magnetic fields up to 14 T. The outcomes of investigations into the magneto-transport characteristics of crystals were thoroughly examined. It was discovered that the transport of charge carriers for silicon microcrystals at low temperatures relies on hopping polarization conductivity. Based on the results of the Si &lt; B, Ni &gt; crystal magnetization study, the concentration of magnetic centers was determined, which is 4 × 10 17 см −3 . It is suggested to employ silicon microcrystals in magnetic field sensors that operate on the magnetoresistive principle.

Investigation of nanoscale core-shell structure of silicon microcrystal doped by boron and nickel: Properties and application