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Multilayer aluminum-doped indium saving indium-tin oxide (ITO) thin films with low volume resistivity and high transmittance in the visible spectrum have been designed and fabricated by sputtering method. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In 2 O 3 -10 mass % SnO 2 ) and aluminum-doped indium saving indium-tin oxide layer with reduced to 50 mass % In 2 O 3  content are discussed. Multilayer aluminum-doped ITO were deposited on glass substrates preheated at 523 K. Thin films deposited in pure argon demonstrate volume resistivity of 445 µΩcm, mobility of 26 cm 2 /V·s, carrier concentration of 5.6 × 10 20  cm −3  and average transmittance larger than 85% in the visible range. Introducing oxygen to sputtering gas allowed increasing average transmittance of as-deposited multilayer aluminum-doped indium saving ITO thin films over 90% in the visible range. As-deposited multilayer aluminum-doped ITO thin films showed significantly higher transmittance in comparison with undoped ML ITO50/ITO90 and crystallized in In 4 Sn 3 O 12  structure.

Effect of oxygen flow rate on properties of multilayer aluminum-doped indium saving ITO thin films produced by sputtering method