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Peculiarities of diffusion processes of Ag after aging test at 170 °C in the nanostructured temperature-sensitive Cu 0.1 Ni 0.1 Co 1.6 Mn 1.2 O 4 -based thick films are investigated. Microstructural and electrical properties of studied thick films before and after annealing (aging test) are investigated. It is shown that aging of thick films results in diffusion of Ag from contact area in region of grain boundaries. Analytical description of aging processes in these materials was performed using relaxation functions. It is shown, that studied aging kinetics are adequately described by compression–exponential relaxation function. Obtained Cu 0.1 Ni 0.1 Co 1.6 Mn 1.2 O 4 -based thick films with stabile electrical properties can be used as temperature-sensitive elements for micro- and nanoelectronics.

Peculiarities of diffusion processes due to aging in nanostructured Cu 0.1 Ni 0.1 Co 1.6 Mn 1.2 O 4 -based thick films