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Boron-based blue light-emitting materials, 3,11-bis(10-phenylanthracen-9-yl)-5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene [PA-DOBNA] was prepared with the composition of DOBNA core moiety and 9-phenylanthracene (PA) moiety as side group. The synthesized material showed excellent thermal stability with a high T d  of &gt; 400 °C. The doped device using dopant exhibited current efficiency (CE) of 2.90 cd/A and EQE of 4.40% at a current density of 10 mA/cm 2 . Commission Internationale de L’Eclairage (CIE) coordinates for non-doped and doped devices are (0.16, 0.18) and (0.15, 0.06) corresponding to the EL peaks at 457 and 446 nm, respectively. In addition, the doped device data showed a deep-blue emission of CIE ( x  = 1.15,  y  = 0.06) suitable for UHD-TV.

Synthesis and electrical properties of new blue emitter having boron atom and anthracene moiety