English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Mg-doped ZnO nanoparticle (NP) thin-film transistors (TFTs) were fabricated using a solution process under a range of Mg content and annealing temperature conditions. The effects of Mg doping and annealing on the electrical properties of the Mg-doped TFTs were investigated. The experimental results demonstrate that critical Mg doping and thermal annealing improve the electrical characteristics of the TFTs. It can mainly be attributed to the suppression of oxygen vacancy formation verified from X-ray photoelectron spectroscopy (XPS) analyses and Hall measurements.

Effects of Mg doping and annealing temperature on the performance of Mg-doped ZnO nanoparticle thin-film transistors