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We prepared quantum dot light-emitting diodes (QLEDs) with a tungsten oxide (WO 3 ) hole injection layer (HIL) produced via thermal evaporation. Placement of a WO 3  layer between the indium tin oxide (ITO) anode and the poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) hole transport layer (HTL) reduced the QELD threshold voltage and enhanced luminance, luminous efficiency, and quantum external efficiency. The optimal layer thickness was 10 nm, associated with increases of 57.2% and 72.3% in the maximum luminous efficiency and maximum external quantum efficiency, respectively, compared to the reference QLED without WO 3  HIL. The results can be explained from fact that the insertion of WO 3  HILs reduced the energy barrier between the ITO and poly-TPD layers, thus facilitating hole injection from ITO into poly-TPD.

Improved performance of quantum dot light-emitting diodes by introducing WO 3 hole injection layers