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In the current article, the main aim is to investigate a new model on a volume fraction, photothermal, initial stress, electromagnetic field, gravity, and rotation effect on an isotropic homogeneous semiconducting generalized thermoelasticity solid under three thermoelastic models viz: classical dynamical (CD), Lord–Shulman (LS), and dual-phase-lags (DPL). The basic governing equations of the problem are presented considering voids, electromagnetic field, photothermal, initial stress, gravitational, rotation, and semiconducting in the context of the model of generalized thermoelasticity. The normal mode analysis method has been applied for solving the partial differential equations to this phenomenon under the assumption boundary conditions. The obtained results see that the photothermal, rotation, electromagnetic field, voids, the process of semiconductor, initial stress, gravity, and thermal relaxation time took a significant role on the phenomenon. The physical quantities with some comparisons are introduced analytically and presented by figures to clear the impact of the external parameters and agreement with the previous and practical results.

A rotational gravitational stressed and voids effect on an electromagnetic photothermal semiconductor medium under three models of thermoelasticity