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This work aims to study Cu films, and Cu-Co bilayer deposited using DC Magnetron sputtering system on silicon substrates. It can be seen that as the thicknesses of films were increased, the grain size becomes larger which was in good agreement with the presented SEM and AFM images. The high-intensity peak for FCC materials was generally (111) reflection, which is observed in the films when the Co-doping ratio was increased, the (111) peak became stronger. The PL spectra have shown that the Cu films with 70 nm Cu have a maximum value of the oxygen defect density however Cu-Co bilayer with 70 nm Co have a minimum value of the oxygen defect density. We found that the Cu-Co bilayer with 70 nm Co was more disordered and the disordering energy E U  in these bilayers was in a bout of 0.681 eV. The Cu-Co bilayers with 40 nm Co have maximum values of the energy gap about of 3.75 eV. The Cu-Co bilayers with 40 nm Co have maximum values of the electron-phonon interaction E e-ph  in about 0.0180 eV. The maximum value of the steepness parameter has occurred in Cu films with 70 nm Co and was 51.55 eV. It can be seen that the surface and volume dissipation factors in the Cu-Co bilayers with 60 nm Co have the maximum value. The maximum value of skin depth of films has occurred in Cu films with 60 nm Cu and it has a peak maximum about of 280 nm. The Cu-Co bilayers with 70 nm have maximum values of the average crystallite size about of 29.1 nm. Also, it is found that the Cu-Co bilayers with 70 nm have minimum values of micro strain ε. It can be observed that the relation between the optical band gap energy E g  and the Urbach energy E u  by E g  = 0.71 ‒ 0.5E u  were studied.

mechanics of advanced materials and structures

Skin depth, optical density, electron-phonon interaction, steepness parameter, band tail width, carriers transitions and dissipation factors in Cu-Co bilayer films