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Molecular dynamics (MD) was used to build a simulation model for skiving single crystal silicon (SCS) with different tool radius. Through the analysis of phase change, instantaneous atomic position, temperature, Wigner–Seitz defects, stress and other variables, and the mechanical state distribution of SCS during processing is studied. The results show that the amorphous phase transition process occurs in the process of skiving SCS with different tool radii, the difference is that amorphous atoms use chips during sharp corner cutting. The form is removed, and the amorphous atoms in the rounded tool are further compressed directly under the tool, causing subsurface damage. The removal mechanism of sharp corner cutter chips is shear, and the removal mechanism of round corner cutter chips is shear and extrusion. And as the radius of the tool increases, the number of compressed atoms below the tool increases directly, resulting in a decrease in the quality of the processed surface.

Analysis of the influence of tool radius on mechanical state of monocrystalline silicon during nano-cutting