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Using a variational method in the effective mass approximation, we calculated the binding energy and polarisation of a shallow donor in a GaAs-Ga 1-x Al x As pillbox surrounded by Ga 1-y Al y As. We present our results as a function of the impurity positions and the strength of the electric field for different shapes of the pillbox with constant volume. It is found that the binding energy and polarisation of donor impurity depend strongly on the shape of the pillbox, the position of the impurity, the intensity of the electric field and the thickness of the potential barrier.

Effect of electric field on the binding energy and polarisation of shallow donor in a GaAs/Ga 1-x Al x As pillbox surrounded by Ga 1-y Al y As