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Design structure of semiconductor window and absorber layers’ materials in thin film solar cells is an essential trend for specifying optical and electrical characteristics of thin film solar cells. This paper has been improved the optical and electrical characteristics and efficiency of traditional HJ-QDSc (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers’ cell. Moreover, this paper represents new design for absorber layer using QD aluminium core/PbS shell absorber layer structure instead of QD PbS absorber layer to use the merits of QD metallic-semiconductor core/multiple shell structure to enhance the performance of previous CdS/QDPbS HJ-QDSc model. The proposal design structure is carried out by replacing the bulk CdTe, CIGS absorber layers and CdS window layer with quantum dot size window layer material and QD core/multiple shell absorber layer based on traditional (SnO 2 /CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo). The proposal design structure on three-types of core/multiple shell for quantum dot based on heterojunction thin film solar cells has been applied. A comparison study has been established between the proposal design and traditional thin film solar cells based on sub-micro absorber layer thickness models.

Strategy trends of core/multiple shell for quantum dot-based heterojunction thin film solar cells